LIST OF EQUIVALENT PART OF TRANSISTORS / JFET / FET / DIODES

TRANSISTOR

Code Type Equivalent Conventional

of       most

Part Common

15 MMBT3960 2N3960

1A FMMT3904 2N3904

1B BC846B BC546B / 2N2222

1C MMBTA20 MPSA20

1E BC847A BC547A

1F BC847B BC547B

1G BC847C / FMMTA06 BC547C

1J BC848A / FMMT2369 BC548A / 2N2369

1K BC848B BC548B

1L BC848C BC548C

1P FMMT2222A 2N2222A

1T MMBT3960A 2N3960A

1X MMBT930 -

1Y MMBT3903 2N3903

2A FMMT3906 2N3906

2B MMBT2907 2N2907

2C BC849C BC549C / BC109C / MMBTA70

2E FMMTA93 -

2F FMMT2907A 2N2907A

2J MMBT3640 2N3640

2K MMBT8598 -

2M MMBT404 -

2N MMBT404A -

2T MMBT4403 2N4403

2W MMBT8599 -

2X MMBT4401 2N4401

3A BC856A / MMBTH24 BC556A

3B BC856B / FMMT918 BC556B

3D MMBTH81 -

3E BC857A / MMBTH10 BC557A

3F BC857B BC557B

3G BC857C BC557C

3J BC858A BC558A

3K BC858B BC558B

3L BC858C BC558C

4A BC859A BC559A

4B BC859B BC559B

4C BC859C BC559C

4E FMMTA92 -

4J FMMT38A -

449 FMMT449 -

489 FMMT489 -

491 FMMT491 -

493 FMMT493 -

5A BC807-16 -

5B BC807-25 BC327-25 / 2N4123

5C BC807-40 -

5E BC808-16 -

5F BC808-25 BC328-25

5G BC808-40 -

549 FMMT549 -

589 FMMT589 -

591 FMMT591 -

593 FMMT593 -

6A BC817-16 -

6B BC817-25 BC337-25

6C BC817-40 -

6E BC818-16 -

6F BC818-25 -

6G BC818-40 -

6H BC818-40 BC338-40

AA BCX51 BC636 / BCW60A

AB BCW60B -

AC BCW60C BC548B

AD BCW60D -

AE BCX52 -

AG BCX70G -

AH BCX70H -

AJ BCX70J -

AK BCX70K -

AL MMBTA55 -

AM BSS64 2N3638

AS1 BST50 BSR50

B2 BSV52 PH2369 / BSX20

BA BCX54 / BCW61A BC635

BB BCW61B -

BC BCW61C -

BD BCW61D -

BE BCX55 -

BG BCX71G -

BH BCX56 BC639

BJ BCX71J -

BK BCX71K -

BN MMBT3638A 2N3638A

BR2 BSR31 2N4031

C1 BCW29 -

C2 BCW30 BC178B / BC558B

C5 MMBA811C5 -

C6 MMBA811C6 -

C7 MMBA811C7 -

C8 MMBA811C8 -

CE BSS79B -

CEC BC869 BC369

CF BSS79C -

CH BSS82B / BSS80B -

CJ BSS80C -

CM BSS82C -

D1 BCW31 BC108A / BC548A

D2 BCW32 BC108A / BC548A

D3 BCW33 BC108C / BC548C

D6 MMBC1622D6 -

D7 MMBC1622D7 -

D8 BCF33 BC549C / BCY58 / MMBC1622D8

DA BCW67A -

DB BCW67B -

DE BFN18 -

DF BCW68F -

DG BCW68G -

DH BFN19 -

E1 BFS17 BFY90 / BFW92

EA BCW65A -

EB BCW65B -

EC BCW65C / BCW67C -

F1 MMBC1009F1 -

F3 MMBC1009F3 -

FA BFQ17 BFW16A

FE BCV46 -

FG BCV47 -

GF BFR92P -

H1 BCW69 -

H2 BCW70 BC557B

K1 BCW71 BC547A

K2 BCW72 BC547B

K4 BCW71R -

K7 BCV71 -

L1 BSS65 -

L2 BSS70 -

L3 MMBC1323L3 -

L4 MMBC1623L4 -

L5 MMBC1623L5 -

L6 MMBC1623L6 -

L7 MMBC1623L7 -

M3 MMBA812M3 -

M4 MMBA812M4 -

M5 MMBA812M5 -

M6 BSR58 / MMBA812M6 2N4858

M7 MMBA812M7 -

O2 BST82 -

P1 BFR92 BFR90

P2 BFR92A BFR90

P5 FMMT2369A 2N2369A

Q3 MMBC1321Q3 -

Q4 MMBC1321Q4 -

Q5 MMBC1321Q5 -

R1 BFR93 BFR91

R2 BFR93A BFR91

S1A SMBT3904 -

S1D SMBTA42 -

S2 MMBA813S2 -

S2A SMBT3906 -

S2D SMBTA92 -

S2F SMBT2907A -

S3 MMBA813S3 -

S4 MMBA813S4 -

T1 BCX17 BC327

T2 BCX18 -

T7 BSR15 2N2907

T8 BSR16 2N2907A

U1 BCX19 BC337

U2 BCX20 -

U7 BSR13 2N2222

U8 BSR14 2N2222A

U92 BSR17A 2N3904

Z2V FMMTA64 -

ZD MMBT4125 2N4125

 

JFET Transistors

Code Type Equivalent Conventional

of most

Part Common

6A MMBF4416

6B MMBF5484

6C MMBFU310

6D MMBF5457

6E MMBF5460

6F MMBF4860

6G MMBF4393

6H MMBF5486

6J MMBF4391

6K MMBF4932

6L MMBF5459

6T MMBFJ310

6W MMBFJ175

6Y MMBFJ177

B08 SST6908

B09 SST6909

B10 SST6910

C11 SST111

C12 SST112

C13 SST113

C41 SST4091

C42 SST4092

C43 SST4093

C59 SST4859

C60 SST4860

C61 SST4861

C91 SST4391

C92 SST4392

C93 SST4393

H16 SST4416

I08 SST108

I09 SST109

I10 SST110

M4 BSR56

M5 BSR57

M6 BSR58

P01 SST201

P02 SST202

P03 SST203

P04 SST204

S14 SST5114

S15 SST5115

S16 SST5116

S70 SST270

S71 SST271

S74 SST174

S75 SST175

S76 SST176

S77 SST177

TV MMBF112

Z08 SST308

Z09 SST309

Z10 SST310

 

TRANSISTOR MOS-FET

Code Type Equivalent Conventional

of most

Part Common

6Z MMBF170

701 2N7001

702 SN7002

SA BSS123

SS BSS138

V01 VN50300T

V02 VN0605T

V04 VN45350T

V0AJ TP610T

V50 VP0610T

 

Diodes

Code Type Equivalent Conventional

of most

Part Common

005 SSTPAD5 Dual Diode

010 SSTPAD10 Dual Diode

020 SSTPAD20 Dual Diode

050 SSTPAD50 Dual Diode

100 SSTPAD100 Dual Diode

200 SSTPAD200 Dual Diode

4D MMBV3401 PIN Diode

4F MMBD353 Dual Schottky diode

4M MMBD101 Schottky diode

4R MMBV3700 PIN diode

4S MMBD201 Schottky diode

4T MMBD301 Schottky diode

500 SSTPAD500 Dual Diode

5AX MMBD6050X -

5B MMBD6100 -

5C MMBD7000 -

5DX MMBD914X -

5D FMMD914 1N914

5F MMBD501 Schottky diode

5G MMBD352 Dual Schottky diode

5H MMBD701 Schottky diode

A1 BAW56 -

A1X MBAW56 Dual diode

A2X MMBD2836X Dual diode

A3 BAT17 BA480

A3X MMBD2835X Dual diode

A4 BAV70 BAW62 / 1N4148

A4X MBAV70 Dual diode

A6 BAS16 BAW62 / 1N4148

A61 BAS28 BAW62 / 1N4148

A6X MBAS16 (MMBD2836X Dual version)

A7 BAV99 BAW62 / 1N4148

A7X MBAV99 Dual diode

ITT BA BAT42W -

JAX BAT42W Dual diode

JD BAW56 -

JE BAV99 -

JJ BAV70 -

JS BAS21 BAV21

JP BAS19 BAV19

L4P BAT54/T1 BAT85

L42 BAT54A/T1 BAT85

L44 BAT54S/T1 BAT85

PSS BAR64-04 Dual diode

PRS BAR64-05 Dual diode

TFX MBAL99 -

 

Type SOT-323

Code Type Equivalent Conventional

of most

Part Common

A1 BAW56W -

A4 BAV70W -

A6 BAS16W -

A7 BAV99W -

TRANSISTOR SUBSTITUTION TUTORIAL

 TRANSISTOR SUBSTITUTION TUTORIAL

De-soldering and replacing a transistor takes very little time.  More time is spent figuring out which one to replace and, sometimes, what to replace it with! The original transistor might need special ordering, or be discontinued and unavailable.  Knowing how to substitute an alternate transistor type can speed up your repair, or make an otherwise impossible repair possible.
TRANSISTOR TYPES
Transistors are given registered type numbers by the Joint Electron Device Engineering Council (JEDEC).  The type number is often printed on the transistor, although product manufacturers sometimes have their own part numbers printed instead.  In that case, the product's Service Manual or Parts List might provide you with the transistor type. If you don't have that particular type, a transistor cross-reference guide can sometimes help you to find a compatible, generic part.  The NTE Cross Reference is a good example - NTE branded replacements are widely available.  But you might already have a suitable substitute in your parts drawers. We arrange our transistor stock, not by their type number, but by their specifications  This makes it easy to go right to the drawers holding good candidates for substitution. You can find transistor specs in data sheets available online.  Use your browser to search for the transistor's JEDEC type, or use a search engine like AllDataSheet.com. The first spec to consider is the Transistor Outline.  This is the only spec you can actually see.
TRANSISTOR OUTLINES
A Transistor Outline number, or TO, refers to a transistor's physical size, shape, and mounting style.  Some TO numbers are shown here:

The transistor outline doesn't usually tell you which of the three transistor leads connects to its Base terminal (B), its Emitter terminal (E), or its Collector terminal (C).  However, the transistor's data sheet will show you that. If the lead arrangement of a small replacement transistor differs from that of the the original, you can sometimes bend the transistor leads across one another to route them into the correct holes in the circuit board.  Just use a bit of spaghetti tubing on the leads to keep them from touching each other.
BIPOLAR TRANSISTOR SPECS
Bipolar (junction) transistors (BJTs) are the most common variety of transistor.  The following electrical specs are important when choosing a substitute BJT.
TRANSISTOR POLARITY
A junction transistor is a sandwich of "N" and "P" type semiconductors.  Either the "meat" has extra negative charge carriers (electrons) and the "bread" has extra positive charge carriers (holes), or the meat has the positive charges and the bread has the negative charges. A substitute transistor must have the same polarity, either "PNP" or "NPN", as the original.   If you install the wrong polarity, the sandwich won't work.
MAXIMUM VOLTAGES
If more than a maximum voltage rating is applied to a transistor, it can be permanently damaged.  At the maximum voltage, also called a breakdown voltage (BV), electrons begin to avalanche in the transistor. During an avalanche, electrons in the P-N transition regions are accelerated to energies so high that they hit bound electrons with enough force to free them, creating additional charge carriers and greatly multiplying the transistor current. There are three breakdown voltages: VCB - the maximum voltage across the Collector-Base terminals VCE - the maximum voltage across the Collector-Emitter terminals VEB - the maximum voltage across the Emitter-Base terminals In each of these ratings, the 3rd terminal is assumed to be electrically open (unconnected).  VCE, for example, may be written as VCEO, BVCEO, or most correctly as V(BR)CEO. The VEB rating isn't usually a factor in choosing a substitute transistor. VCB is always equal to or greater than VCE and you can use either of these maximum voltages to compare transistors.  Choose a substitute transistor with a breakdown voltage rating at least as high as the original.
MAXIMUM CURRENT
Maximum current is the maximum continuous collector current (IC) that a transistor can withstand without permanent damage. Small, TO-92 or TO-98 transistors, depending on their fabrication, can handle between about 100 and 1000mA.  A TO-5 package might be rated as high as 5 amps; a TO-220, as high as 25A; and a TO-3, up to 500A. Be sure to choose a substitute transistor with a maximum current rating at least as high as the original.
MAXIMUM POWER
Maximum Power, called PD, is the overall power a transistor can dissipate, through heat, without burning up. Heat sinks and fans increase the ability of a transistor to dissipate heat.  A TO-5 transistor with a PD of 3 watts might be able to dissipate 8-10 watts with a heat sink. Choose a substitute transistor with a maximum power rating at least as high as the original.
CURRENT GAIN
Current gain is only occasionally significant when choosing a substitute transistor.  Actual circuit gain depends on other components.  But if the original transistor has a high gain, try to match it. Current gain falls off at higher frequencies, so a high-gain transistor can deliver a wider frequency response than a low-gain transistor. One measure of gain, called hFE, is often used for comparing transistors.  The capital FE subscript refers to the Forward DC current transfer ratio in a common Emitter circuit.  In other words, IC / IB. Data sheets often specify a minimum or typical value of hFE, or else a range of values that applies at a certain collector current (IC). "Darlington" transistors are made up of two transistors in series and have gains in the thousands, instead of the tens or hundreds.  They also have double the input voltage drop since there are two semiconductor junctions in series. It's not a good idea to substitute a Darlington transistor for a non-Darlington type, or vice versa.
FIELD-EFFECT TRANSISTOR SPECS
Field-effect transistors (FETs) come with the same transistor outlines as the BJTs  but their electrical specs are somewhat different:
FET TYPES
Field-effect transistors come in three basic types: Type A - the Junction-gate FET (JFET) Type B - the Insulated-gate FET (IGFET) in Depletion mode Type C - the Insulated-gate FET (IGFET) in Enhancement mode IGFETs are usually called MOSFETs (Metal-Oxide Semiconductor FETs) because, originally, all IGFETs used metal gates coated with oxide insulators.  Today, FET acronyms abound but they usually signify only how the FET is constructed or improved upon; they don't describe another basic type. Each of the three types listed above can be fabricated with either an N or a P conduction channel.  So, altogether, there are six types of field-effect transistors. Be sure to substitute a FET of the same type as the original.
MAXIMUM VOLTAGES
One of the following breakdown voltages is usually included in the specifications for a FET: BVGSS - the breakdown voltage between the Gate and the Source terminals when the drain is short-circuited to the source.  (This rating is used primarily with JFETs.) BVDSS - the breakdown voltage between the Drain and the Source terminals when the gate is short-circuited to the source.  (This rating is used primarily with Power MOSFETs.) A breakdown voltage can also be written as V(BR)GSS or simply VGSS. You can use either of the above voltages when comparing FETs.  Just make sure to compare apples with apples.  Pick a substitute FET with a rating at least as high as the original.
CURRENT
IDSS is the Drain to Source leakage current, often provided for small-signal FETs.  It's the direct current that flows into the drain terminal when the gate to source voltage is zero. In a depletion type device, IDSS is an on-state current.  In an enhancement type device, it's an off-state current.  Minimum and maximum values are usually given.  Select a substitute with the same general range of values. ID(cont), the Continuous Drain Current, is usually provided for power MOSFETs.  It's a maximum current rating so choose a substitute with a rating at least as high as the original.
MAXIMUM POWER
PD is the overall power the FET can dissipate through heat.  This is the same spec used for bipolar transistors.  Choose a substitute with a rating at least as high as the original.
"ON" RESISTANCE
rDS(on) is the DC resistance between the Drain and Source terminals when a specified gate to source voltage is applied to bias the FET to the on-state. For a depletion-type FET, the gate-source bias voltage might be 0 V (i.e., a gate to source short). rDS(on) could be important when replacing a power MOSFET.
SUMMARY
Finding a substitute replacement transistor isn't difficult if you know the specs of the original transistor and organize your stock by specs instead of type numbers.  You'll find that fewer devices need to be stocked, and turnaround time can be reduced. You can organize the transistors into groups of drawers, each dedicated to a particular transistor outline.  Subdivide the TO groups by electrical ratings like VCEO, IC, and PD, in whatever order you choose. Then, when you need to pick a substitute for an original transistor, you can quickly home in on all your potential candidates